Charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by first-principles calculations
نویسندگان
چکیده
منابع مشابه
Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of a Fe(001) surface
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes....
متن کاملTunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.
Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. ...
متن کاملFirst-principles calculations of nonlinear optical susceptibility of inorganic materials
A method for calculations of the frequency-dependent nonlinear susceptibility of inorganic materials is implemented in the velocity gauge using a linear combination of atomic orbitals (LCAO) method within the framework of either the Hartree–Fock approximation or density functional theory. It is based on the standard time-dependent diagrammatic perturbation theory and has previously been applied...
متن کاملCompensated Semimetal LaSb with Unsaturated Magnetoresistance.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (...
متن کاملSchottky barrier formation and band bending revealed by first- principles calculations
The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.235142